Carbon contamination free Ge(100) surface cleaning for MBE
- 1 January 1998
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 125 (1) , 125-128
- https://doi.org/10.1016/s0169-4332(97)00587-4
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Kinetics of Si growth on Ge(100) in Si2H6 gas-source molecular beam epitaxy and low-pressure chemical vapor depositionSurface Science, 1995
- An efficient method for cleaning Ge(100) surfaceSurface Science, 1994
- Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaningJournal of Vacuum Science & Technology A, 1993
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986