Analyses of the chemical topography of silicon dioxide contact holes etched in a high density plasma source
- 1 May 1997
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures
- Vol. 15 (3) , 629-639
- https://doi.org/10.1116/1.589305
Abstract
No abstract availableThis publication has 16 references indexed in Scilit:
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