InGaAs/InP separated absorption and multiplication regions avalanche photodiode using liquid- and vapor-phase epitaxies
- 1 February 1981
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 17 (2) , 250-254
- https://doi.org/10.1109/jqe.1981.1071070
Abstract
No abstract availableKeywords
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