Punch-through type InGaAs photodetector fabricated by vapor-phase epitaxy
- 1 May 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (5) , 542-545
- https://doi.org/10.1109/jqe.1980.1070525
Abstract
No abstract availableKeywords
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