Vapor-phase epitaxial InxGa1−xAs on (100), (111)A, and (111)B InP substrates
- 15 October 1979
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (8) , 603-605
- https://doi.org/10.1063/1.91223
Abstract
Effects of InP substrate orientation on InxGa1−xAs vapor‐phase epitaxial growth are studied. The fractional composition x of the grown layer on (100) substrate is smaller than for (111) B at identical growth temperatures and gas flow rates. The In content x decreases with increasing temperature. Growth rate, carrier concentration, and carrier mobility depend on substrate orientation. Growth on (100) substrates at temperatures above 710°C is suitable for obtaining smooth surface layers with low carrier concentration and high mobility.Keywords
This publication has 17 references indexed in Scilit:
- Planar photodiodes made from vapour-phase epitaxial In
x
Ga
1−
x
AsElectronics Letters, 1979
- Gallium indium arsenide photodiodesSolid-State Electronics, 1979
- Wavelength dispersion of optical fibers directly measured by ’’difference method’’ in the 0.8–1.6 μm rangeReview of Scientific Instruments, 1979
- Ultimate low-loss single-mode fibre at 1.55 μmElectronics Letters, 1979
- The growth of GaxIn1−xAs on (100) InP by liquid-phase epitaxyApplied Physics Letters, 1978
- Crack formation in InP-GaxIn1−xAs-InP double-heterostructure fabricationApplied Physics Letters, 1976
- Ion implanted photodiode detectors in epitaxial (Gax In_1-x) AsApplied Optics, 1975
- Metallurgical amd electroluminescence characteristics of vapor-phase and liquid-phase epitaxial junction structures of InxGa1−xAsJournal of Electronic Materials, 1975
- Structure of vapor-deposited GaxIn1−xAs crystalsJournal of Applied Physics, 1974
- Schottky barrier InxGa1−xAs alloy avalanche photodiodes for 1.06 μmApplied Physics Letters, 1974