10 Gbit/s bit-synchronizer with automatic retiming clock alignment using quantum well AlGaAs/GaAs/AlGaAs technology

Abstract
A 10 Gb/s bit-synchronizer circuit has been fabricated using an enhancement/depletion 0.3 mu m recessed-gate AlGaAs/GaAs/AlGaAs quantum well FET process. The differential gain of the phase comparator circuit is measured to be 371 mV/rad. The phase margins for monotonous phase comparison are -54/+21 degree relative to the in bit cell center position of the clock edge. The chip has a power dissipation of 160 mW at a supply of 1.90 V.

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