New deep acceptor in epitaxial cubic SiC
- 25 December 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 55 (26) , 2757-2759
- https://doi.org/10.1063/1.101946
Abstract
We have investigated the temperature and excitation intensity dependence of photoluminescence (PL) spectra in several undoped and lightly Al-doped thin films of cubic SiC grown by chemical vapor deposition on Si substrates. The low-power PL spectra in all samples studied exhibit a deep donor-acceptor pair PL band which involves a previously undetected deep acceptor (EA=470 meV). The pervasive character of this deep acceptor suggests the possibility that it is at least partially responsible for the high compensation observed in undoped films of cubic SiC.Keywords
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