Scandium And Gallium Implantation Doping Of Silicon Carbide

This publication has 15 references indexed in Scilit:

• Damage production and annealing of ion implanted silicon carbide
  Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1996
• Ga-bound excitons in 3C-, 4H-, and 6H-SiC
  Physical Review B, 1996
• Ion Implantation and Annealing Effects in Silicon Carbide
  MRS Proceedings, 1996
• Complete recrystallization of amorphous silicon carbide layers by ion irradiation
  Applied Physics Letters, 1995
• Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
  Proceedings of the IEEE, 1991
• Characterization of semiconductor materials by Raman microprobe
  IEEE Journal of Quantum Electronics, 1989
• Site effect on the impurity levels in4H,6H, and15RSiC
  Physical Review B, 1980
• Investigation of silicon carbide single crystals doped with scandium
  Physica Status Solidi (a), 1974
• Photoluminescence of Radiation Defects in Ion-Implanted6HSiC
  Physical Review B, 1972
• Exciton Recombination Radiation and Phonon Spectrum of6HSiC
  Physical Review B, 1962