Local Strain-Mediated Chemical Potential Control of Quantum Dot Self-Organization in Heteroepitaxy
- 15 January 2004
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 92 (2) , 025502
- https://doi.org/10.1103/physrevlett.92.025502
Abstract
From observations of self-assembly of Ge quantum dots directed by substrate morphology, we propose the concept of control of ordering in heteroepitaxy by a local strain-mediated surface chemical potential. Using quite simple lithography, we demonstrate directed quantum dot ordering. The strain part of the chemical potential is caused by the spatially nonuniform relaxation of the strained layer, which in our study is the Ge wetting layer, but, more generally, can be a deposited strained buffer layer. This model provides a consistent picture of prior literature.Keywords
This publication has 22 references indexed in Scilit:
- Self-assembling Ge(Si)/Si(100) quantum dotsIEEE Journal of Quantum Electronics, 2002
- Strain engineering, self-assembly, and nanoarchitectures in thin SiGe films on SiMaterials Science and Engineering: B, 2002
- Exciton Storage in Semiconductor Self-Assembled Quantum DotsScience, 1999
- Lasing in quantum-dot ensembles with sharp adjustable electronic shellsApplied Physics Letters, 1999
- Self-organized nanostructures in Si 1-x Ge x films on Si(001)Applied Physics A, 1998
- Self-assembled Ge dots: Growth, characterization, ordering, and applicationsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1998
- Self-organized nanoscale structures in filmsSurface Science, 1997
- Onset of incoherency and defect introduction in the initial stages of molecular beam epitaxical growth of highly strained InxGa1−xAs on GaAs(100)Applied Physics Letters, 1990
- Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)Physical Review Letters, 1990
- Dislocation-free Stranski-Krastanow growth of Ge on Si(100)Physical Review Letters, 1990