0.8 μm BiCMOS process with high resistivity substrate for L-band Si-MMIC applications
- 24 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 10889299,p. 134-137
- https://doi.org/10.1109/bipol.1996.554627
Abstract
This paper describes a BiCMOS process for L-band Si-MMIC applications. Low loss transmission line, high performance bipolar transistor (emitter minimum size /spl sim/0.5 /spl mu/m), 0.8 /spl mu/m CMOS, and Schottky diode are integrated on a high resistivity silicon substrate (HRS). Losses of two types of transmission lines, which are composed of multilevel metal layers, are investigated in both high and low resistivity substrates. A low noise amplifier (LNA) is fabricated on a conventional low resistivity silicon substrate.Keywords
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