Adhesive Bonding of InP∕InGaAsP Dies to Processed Silicon-On-Insulator Wafers using DVS-bis-Benzocyclobutene
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 153 (12) , G1015-G1019
- https://doi.org/10.1149/1.2352045
Abstract
The process of bonding InP∕InGaAsPInP∕InGaAsP dies to a processed silicon-on-insulator wafer using sub- 300nm300nm layers of DVS-bis-benzocyclobutene (BCB) was developed. The planarization properties of these DVS-bis-BCB layers were measured and an optimal prebonding die preparation and polymer precure are presented. Bonding quality and bonding strength are assessed, showing high-quality bonding with sufficient bonding strength to survive postbonding processing.Keywords
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