Eddy current monitoring system and data reduction protocol for Czochralski silicon crystal growth
- 1 April 1988
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 88 (1) , 30-38
- https://doi.org/10.1016/s0022-0248(98)90005-7
Abstract
No abstract availableThis publication has 15 references indexed in Scilit:
- Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growthJournal of Crystal Growth, 1986
- Interface shape in Czochralski grown crystals: Effect of conduction and radiationJournal of Crystal Growth, 1985
- Simulation of temperature distribution in crystals grown by Czochralski methodJournal of Crystal Growth, 1985
- In-service inspection of PWR steam generators by eddy currents; French achievements in defect detection and evaluationNuclear Engineering and Design, 1984
- Heat transfer in silicon Czochralski crystal growthJournal of Crystal Growth, 1983
- Influence of annealing during growth on defect formation in Czochralski siliconJournal of Crystal Growth, 1983
- Czochralski silicon pull rate limitsJournal of Crystal Growth, 1981
- Eddy current study of solidification in lead and lead 20 pct tinMetallurgical Transactions B, 1980
- Eddy current response to metallic solidification in one dimensionMetallurgical Transactions B, 1980
- Analysis of eddy-current flowmetersJournal of Applied Physics, 1975