Influence of annealing during growth on defect formation in Czochralski silicon
- 28 February 1983
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 61 (1) , 80-84
- https://doi.org/10.1016/0022-0248(83)90282-8
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
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- A New Preferential Etch for Defects in Silicon CrystalsJournal of the Electrochemical Society, 1977
- Intrinsic gettering by oxide precipitate induced dislocations in Czochralski SiApplied Physics Letters, 1977
- Anomalous resistivity profiles in long silicon crystals grown by the Czochralski methodJournal of Crystal Growth, 1973
- The temperature distribution in pulled germanium crystals during growthSolid-State Electronics, 1964