Heavy arsenic doping of silicon grown by atmospheric-pressure chemical vapor deposition at low temperatures
- 27 January 1992
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 60 (4) , 454-456
- https://doi.org/10.1063/1.106632
Abstract
Arsenic doping of epitaxial grown Si over the temperature range from 850 °C to 550 °C was investigated in an ultraclean atmospheric-pressure chemical vapor deposition reactor. Growth was carried out from dichlorosilane (DCS) in H2 carrier gas. Arsenic could be incorporated into single crystal silicon at levels approaching 10 at. %. Carrier concentrations exceeding 1×1020/cm3 were obtained for the as-grown films. The material remained single-crystalline, as measured by ion channeling and cross-section transmission electron microscopy, and exhibited excellent surface morphology with no Hillock formation observed. AsH3 dramatically enhanced the growth rate of Si at lower temperatures.Keywords
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