Characterisation of CoSi2/- and TiSi2/n-GaAs Schottky barriers
- 1 January 1990
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 5 (1) , 60-64
- https://doi.org/10.1088/0268-1242/5/1/007
Abstract
The heights of CoSi2/- and TiSi2/n-GaAs Schottky barriers are determined, by various methods, to be 0.77 and 0.64 eV respectively. These values are discussed in view of the recently developed Schottky barrier theories such as the advanced unified defect model and the effective workfunction model. The thermal stability of these contacts is investigated and it is found that the CoSi2/n-GaAs barrier height remains reasonably stable up to 600 degrees C for 10 min anneals and up to 750 degrees C for 1 min anneals. Under oxygen-free conditions and/or for shorter anneal times, this limit value may probably be increased. Consequently, CoSi2 may be an interesting contact material for high-temperature applications such as self-aligned GaAs MESFET fabrication.Keywords
This publication has 12 references indexed in Scilit:
- Effect of annealing on the electrical and structural properties of rf-sputtered TaSi2 Schottky contacts to GaAsJournal of Applied Physics, 1988
- The advanced unified defect model for Schottky barrier formationJournal of Vacuum Science & Technology B, 1988
- Band bending and interface states for metals on GaAsApplied Physics Letters, 1988
- Metal contacts to GaAs with 1 eV Schottky barrier heightApplied Physics Letters, 1988
- Molecular-beam epitaxial growth and characterization of GaAs on epitaxial CoSi2 films on Si(111)Journal of Vacuum Science & Technology B, 1988
- Refractory metal nitride rectifying contacts on GaAsJournal of Vacuum Science & Technology B, 1987
- Sputter-induced damage in Al/n-GaAs and Al/p-GaAs Schottky barriersSemiconductor Science and Technology, 1987
- Thermal and chemical stability of Schottky metallization on GaAsApplied Physics Letters, 1985
- Titanium nitride Schottky-barrier contacts to GaAsApplied Physics Letters, 1983
- GaAs metallization: Some problems and trendsJournal of Vacuum Science and Technology, 1981