Ni 2 Si nanowires of extraordinarily low resistivity
- 22 May 2006
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 88 (21)
- https://doi.org/10.1063/1.2207222
Abstract
Ultralong, polycrystalline Ni2Si nanowires are fabricated by combining sidewall transfer lithography with self-aligned silicidation. Upon formation at 500°C, the nanowires that are 400μm long with a rectangular cross section of 37.5 by 25.3nm are characterized by a resistivity of 25±1μΩcm which is similar to the value for Ni2Si thin films. Further annealing at 800°C results in an extraordinarily low wire resistivity of 10μΩcm. Such a drastic decrease in resistivity is attributed to a significant grain growth and a low density of defects in the nanowires.Keywords
This publication has 7 references indexed in Scilit:
- Electrically robust ultralong nanowires of NiSi, Ni2Si, and Ni31Si12Applied Physics Letters, 2006
- A robust spacer gate process for deca-nanometer high-frequency MOSFETsMicroelectronic Engineering, 2005
- Nickel-silicide phase effects on flatband voltage shift and equivalent oxide thickness decrease of hafnium silicon oxynitride metal-silicon-oxide capacitorsApplied Physics Letters, 2005
- Size-dependent melting point of noble metalsMaterials Chemistry and Physics, 2003
- A spacer patterning technology for nanoscale CMOSIEEE Transactions on Electron Devices, 2002
- Investigation of Polycrystalline Nickel Silicide Films as a Gate MaterialJournal of the Electrochemical Society, 2001
- Kinetic studies of intermetallic compound formation by resistance measurementsThin Solid Films, 1995