Investigation of Polycrystalline Nickel Silicide Films as a Gate Material
- 1 January 2001
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 148 (5) , G271
- https://doi.org/10.1149/1.1362551
Abstract
The work function of polycrystalline nickel silicide film formed by rapid thermal annealing (RTA) has been studied using capacitance-voltage (C-V) measurements and metal-oxide semiconductor (MOS) structures. The effect of sintering temperature on work function has also been studied. Results show that the work function of n+dopedn+doped NiSi gate is about 4.6 eV and is stable from 400 to 800°C. For p+dopedp+doped NiSi gate, the work function is 5 eV. The gate-substrate leakage current is small and the oxide quality is similar to that in Al-gate MOS capacitors even for oxides as thin as 8 nm. The poly-gate depletion effect (PDE) has also been investigated by quasi-static C-V. Compared with that of poly-Si and polySi1−xGex,polySi1−xGex, no PDE is observed in silicide-gate n-MOS device even when the gate is undoped. The results suggest that nickel silicide film may be used as a potential gate material in complementary MOS or thin-film transistor devices. © 2001 The Electrochemical Society. All rights reserved.Keywords
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