Dielectric film etching in semiconductor device manufacturing
- 1 May 2002
- journal article
- Published by Elsevier in Applied Surface Science
- Vol. 192 (1-4) , 270-298
- https://doi.org/10.1016/s0169-4332(02)00031-4
Abstract
No abstract availableThis publication has 47 references indexed in Scilit:
- A new gas circulation RIEIEEE Transactions on Semiconductor Manufacturing, 2000
- Plasma research activities in the association of super-advanced electronics technologiesJournal of Vacuum Science & Technology A, 1998
- Ion Energy Analysis through rf-ElectrodeJapanese Journal of Applied Physics, 1997
- A New High-Density Plasma Etching System Using A Dipole-Ring MagnetJapanese Journal of Applied Physics, 1995
- Measurement of the CF3radical using infrared diode laser absorption spectroscopyJournal of Physics D: Applied Physics, 1993
- Measurements of the CF Radical in DC Pulsed CF4/H2 Discharge Plasma Using Infrared Diode Laser Absorption SpectroscopyJapanese Journal of Applied Physics, 1990
- Low Temperature Chemical Vapor Deposition Method Utilizing an Electron Cyclotron Resonance PlasmaJapanese Journal of Applied Physics, 1983
- Microwave Plasma EtchingJapanese Journal of Applied Physics, 1977
- Plasma reactor design for the selective etching of SiO2 on SiSolid-State Electronics, 1976
- Control of relative etch rates of SiO2 and Si in plasma etchingSolid-State Electronics, 1975