New high-rate sputtering-type electron cyclotron resonance microwave plasma using an electric mirror
- 24 April 1989
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (17) , 1645-1647
- https://doi.org/10.1063/1.101310
Abstract
High-rate sputtering is achieved by means of new electron cyclotron resonance microwave plasma employing sputtering using an electric mirror. This apparatus consists of both planar and cylindrical targets. Microwave power is perpendicularly or obliquely introduced into the resonance chamber. High-density plasma of 1012 cm−3 is generated. The reflected electrons oscillating between the two targets play a major role in generating the dense plasma, i.e., as a beam-plasma interaction. Both insulator and conductor films can be continuously deposited by this sputtering method at high rates under low gas pressures of 10−2 Pa. Al, Mo, and Fe films are deposited at rates above 2000 Å/min.Keywords
This publication has 7 references indexed in Scilit:
- Dense plasma production for high rate sputtering by means of an electric mirrorApplied Physics Letters, 1988
- Ion energy analysis for sputtering-type electron-cyclotron-resonance microwave plasmaJournal of Applied Physics, 1988
- Photochromism and anomalous crystallite orientation of ZnO films prepared by a sputtering-type electron cyclotron resonance microwave plasmaApplied Physics Letters, 1988
- An electron cyclotron resonance plasma deposition technique employing magnetron mode sputteringJournal of Vacuum Science & Technology A, 1988
- Electron Cyclotron Resonance Plasma Deposition Technique Using Raw Material Supply by SputteringJapanese Journal of Applied Physics, 1984
- Beam-Plasma Discharge: Buildup of OscillationsJournal of Applied Physics, 1963
- Studies of Cold Cathode Discharges in Magnetic FieldsJournal of Applied Physics, 1959