The current understanding of epitaxial CVD silicon doping in the light of modelling and theory development (I) empirical foundations and process controlling equations
- 1 April 1987
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 22 (4) , 487-494
- https://doi.org/10.1002/crat.2170220408
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Doping of epitaxial CVD silicon with arsenic or phosphorus (II). Non‐steady state conditionsCrystal Research and Technology, 1985
- Doping process control in silicon epitaxy (I). System identificationCrystal Research and Technology, 1983
- Total pressure dependence of doping element incorporation during the chemical vapour deposition of epitaxial siliconCrystal Research and Technology, 1982
- The Incorporation of Phosphorus in Silicon Epitaxial Layer GrowthJournal of the Electrochemical Society, 1974
- Doping in chemically vapour deposited epitaxial siliconJournal of Crystal Growth, 1972
- Doping of epitaxial siliconJournal of Crystal Growth, 1970
- Epitaxial Silicon Films by the Hydrogen Reduction of SiCl[sub 4]Journal of the Electrochemical Society, 1961