Doping process control in silicon epitaxy (I). System identification
- 1 January 1983
- journal article
- Published by Wiley in Crystal Research and Technology
- Vol. 18 (12) , 1533-1540
- https://doi.org/10.1002/crat.2170181218
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
- Optimization of Si epitaxial growthJournal of Crystal Growth, 1981
- Computer Simulation in Silicon EpitaxyJournal of the Electrochemical Society, 1981
- A Model for Dopant Incorporation into Growing Silicon Epitaxial Films: II . Comparison of Theory and ExperimentJournal of the Electrochemical Society, 1979
- Transient and Steady‐State Response of the Dopant System of a Silicon Epitaxial Reactor: Transfer‐Function ApproachJournal of the Electrochemical Society, 1978
- Hyperabrupt epitaxial tuning diodesSolid-State Electronics, 1977
- Silicon Epitaxial Wafer with Abrupt Interface by Two‐Step Epitaxial Growth TechniqueJournal of the Electrochemical Society, 1975
- Abnormal Impurity Distributions in High‐Purity Epitaxial Silicon LayersJournal of the Electrochemical Society, 1975