Optimization of Si epitaxial growth
- 1 April 1981
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 52, 207-212
- https://doi.org/10.1016/0022-0248(81)90195-0
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Analysis of Transport Processes in Vertical Cylinder Epitaxy ReactorsJournal of the Electrochemical Society, 1977
- The incorporation of phosphorus in silicon; The temperature dependence of the segregation coefficientJournal of Crystal Growth, 1975
- Impurity Redistribution during Silicon Epitaxial Growth and Semiconductor Device ProcessingJournal of the Electrochemical Society, 1974
- Chemical thermodynamics for optimization of epitaxial film deposition processesThin Solid Films, 1972
- Autodoping of Epitaxial SiliconJournal of the Electrochemical Society, 1968
- Impurity Distribution in Epitaxial GrowthJournal of Applied Physics, 1965