The incorporation of phosphorus in silicon; The temperature dependence of the segregation coefficient
- 31 December 1975
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 31, 317-322
- https://doi.org/10.1016/0022-0248(75)90147-5
Abstract
No abstract availableThis publication has 9 references indexed in Scilit:
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- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
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