Diffusion of Phosphorus into Silicon under Conditions of Controlled Vapour Pressure
- 1 April 1959
- journal article
- Published by IOP Publishing in Proceedings of the Physical Society
- Vol. 73 (4) , 577-584
- https://doi.org/10.1088/0370-1328/73/4/306
Abstract
No abstract availableThis publication has 7 references indexed in Scilit:
- Control of Surface Concentration in the Diffusion of Phosphorus in SiliconNature, 1958
- Diffusion of Antimony Out of Germanium and Some Properties of the Antimony-Germanium SystemPhysical Review B, 1957
- Evaporation of Impurities from SemiconductorsJournal of Applied Physics, 1957
- Rate Limitation at the Surface for Impurity Diffusion in SemiconductorsPhysical Review B, 1956
- Diffusion of Donor and Acceptor Elements in SiliconJournal of Applied Physics, 1956
- Electrical Properties of Silicon Containing Arsenic and BoronPhysical Review B, 1954
- Equalibrium Thermochemistry of Solid and Liquid Alloys of Germanium and of Silicon. II. The Retrograde Solid Solubilities of Sb in Ge, Cu in Ge and Cu in SiThe Journal of Physical Chemistry, 1953