Annealing Study in Electron-Irradiated n-Type Silicon
- 1 December 1966
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 37 (13) , 5009-5011
- https://doi.org/10.1063/1.1708194
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- New Oxygen Infrared Bands in Annealed Irradiated SiliconPhysical Review B, 1964
- Effects of Dosage and Impurities on Radiation Damage of Carrier Life Time in SiJournal of the Physics Society Japan, 1964
- Irradiation Damage in Germanium and Silicon due to Electrons and Gamma RaysJournal of Applied Physics, 1959
- Resistivity Measurements on Germanium for TransistorsProceedings of the IRE, 1954