GaInAsP/InP DH lasers with a chemically etched facet
- 1 October 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 16 (10) , 1044-1047
- https://doi.org/10.1109/jqe.1980.1070360
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
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- GaInAsP/InP Facet Lasers with Chemically-Etched End MirrorsJapanese Journal of Applied Physics, 1979
- GaInAsP/InP DH lasers and related fabricating techniques for integrationIEEE Journal of Quantum Electronics, 1979
- Injection heterolaser with a short resonatorSoviet Journal of Quantum Electronics, 1979
- GaAs integrated optical circuits by wet chemical etchingIEEE Journal of Quantum Electronics, 1979
- Liquid phase epitaxial In1−xGaxAsyP1−y lattice matched to 〈100〉 InP over the complete wavelength range 0.92⩽λ⩽1.65 μmApplied Physics Letters, 1978
- Short Cavity Semiconductor LaserJapanese Journal of Applied Physics, 1977
- Optical Coupling Effect of Twin Lasers Fabricated by Wet Chemical EtchingJapanese Journal of Applied Physics, 1977
- GaAs double heterostructure lasers fabricated by wet chemical etchingJournal of Applied Physics, 1976
- Integrated GaAs-AlGaAs double-heterostructure lasersApplied Physics Letters, 1975