Field-emission characteristics and large current density of heavily Si-doped AlN and AlxGa1−xN (0.38⩽x<1)
- 26 November 2001
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 79 (22) , 3642-3644
- https://doi.org/10.1063/1.1421223
Abstract
No abstract availableKeywords
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