Electrical effects of crystal imperfections studied by scanning electron microscopy
- 30 September 1966
- journal article
- research article
- Published by Elsevier in Solid-State Electronics
- Vol. 9 (9) , 900-901
- https://doi.org/10.1016/0038-1101(66)90042-6
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- The direct observation of electrical leakage paths due to crystal defects by use of the scanning electron microscopeSolid-State Electronics, 1966
- Observations of Individual Dislocations and Oxygen Precipitates in Silicon with a Scanning Electron Beam MethodJournal of Applied Physics, 1965
- Effect of Dislocations on Breakdown in Silicon p-n JunctionsJournal of Applied Physics, 1958