Threshold reduction in Pb1−xSnx Te laser diodes through the use of double heterojunction geometries
- 15 October 1974
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 25 (8) , 440-442
- https://doi.org/10.1063/1.1655540
Abstract
A systematic study has been made of the effect of the middle active region width in double heterojunction Pb1−xSnx Te/PbTe laser diodes on the lasing threshold. A fourfold reduction in pulsed threshold over that of comparable single heterojunction lasers is demonstrated in lasers having 4‐μm‐wide middle regions. A comparison is also made between lasers fabricated by liquid phase epitaxy using undoped melts and substrates, and using thallium‐doped p ‐type PbTe layers; the latter is shown to yield thresholds as much as two times lower.Keywords
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