Double heterostructure Pb1-xSnx Te–PbTe lasers with cw operation at 77 K

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Abstract
Diode lasers that operate cw at 77 K have been made from a Pb0.88Sn0.12 Te–PbTe double heterostructure grown by liquid phase epitaxy. Junction diffusion during growth has been prevented by the use of Tl‐doped PbTe substrates. The wavelength emitted in cw operation has been temperature tuned from 10.5 μm at 12 K to less than 8.2 μm at 80 K, a range of nearly 280 cm−1. The cw threshold current density increases from 1.6 × 103 A/cm2 at 12 K to 4.2 × 103 A/cm2 at 77 K. The measured cw power is 10 mW in four modes at 12 K (1.8 × 104 A/cm2) and 1.2 mW in a single mode at 77 K (7.5 × 103 A/cm2).