Zinc vacancy-associated defects and donor-acceptor recombination in ZnSe

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Abstract
Donor acceptor recombinations in ZnSe have been investigated by optically detected magnetic resonance. In undoped material a donor resonance is observed on the bound-to-bound edge emission with a g value of 1.115+or-0.010. In doped material an emission at 620 nm (2.00 eV) has been shown to result from the recombination of donor electrons with holes trapped at A-centres, (VZn-Cl) degrees , while a second donor-acceptor emission at 632 nm (1.96 eV) results from holes trapped at acceptor centres that were previously identified as isolated zinc vacancies but now are assigned to associated zinc vacancy-impurity pair centres of unknown species with a small orthorhombic distortion.