Broad spectrum source for local access networks
- 11 April 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (8) , 749-751
- https://doi.org/10.1049/el:19960508
Abstract
The authors present the first longitudinally distributed bandgap source which can be used as a broad spectrum (80 nm FWHM) LED or a broad spectrum (11 nm FWHM) laser centred at 1.53 µm. The device was fabricated with low pressure MOVPE using selective area epitaxy. A multiple electrode design allows a flat topped output spectrum. Used as an LED, the authors couple –4.5 dBm into a lensed singlemode fibre; as a laser they couple 3 dBm. They also observe amplitude self pulsing of the source at 68 MHz slightly above laser threshold.Keywords
This publication has 3 references indexed in Scilit:
- Broadband emission from InGaAs-GaAs-AlGaAs LED withintegrated absorber by selective-area MOCVDElectronics Letters, 1995
- 1.24–1.66 μm quantum energy tuning for simultaneously grown InGaAs/InP quantum wells by selective-area metalorganic vapor phase epitaxyJournal of Crystal Growth, 1994
- A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor depositionIEEE Photonics Technology Letters, 1994