A strained-layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED by selective-area metalorganic chemical vapor deposition
- 1 November 1994
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 6 (11) , 1289-1292
- https://doi.org/10.1109/68.334816
Abstract
Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.<>Keywords
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