Broadband emission from InGaAs-GaAs-AlGaAs LED withintegrated absorber by selective-area MOCVD
- 17 August 1995
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 31 (17) , 1498-1499
- https://doi.org/10.1049/el:19950982
Abstract
Three-step selective-area metal organic chemical vapour deposition is used to fabricate a strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LED with an integrated absorber. A tapered oxide width mask pattern is used for the active region regrowth to produce an edge emitting device with a continuous variation in the quantum well thickness and composition along its length. A maximum spectral width of 165 nm is obtained.Keywords
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