Quantum well superluminescent diode with very wide emission spectrum
- 2 April 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (14) , 1345-1346
- https://doi.org/10.1063/1.102509
Abstract
Superluminescent diodes (SLDs) employing single and multiple quantum wells were investigated. The diode structure includes a monolithic window and a gain and absorber section. Spectral widths 2–3 times that of conventional SLDs were demonstrated.Keywords
This publication has 6 references indexed in Scilit:
- Submilliampere threshold current pseudomorphic InGaAs/AlGaAs buried-heterostructure quantum well lasers grown by molecular beam epitaxyApplied Physics Letters, 1989
- High-power high-efficiency GaAlAs superluminescent diodes with an internal absorber for lasing suppressionIEEE Journal of Quantum Electronics, 1989
- High-power 1.3 μm superluminescent diodeApplied Physics Letters, 1989
- High output power GaInAsP/InP superluminescent diode at 1.3 μmElectronics Letters, 1988
- High power, high efficiency window buried heterostructure GaAlAs superluminescent diode with an integrated absorberApplied Physics Letters, 1987
- High-power low-divergence superradiance diodeApplied Physics Letters, 1982