Controlled-inversion transistors

1 September 1975

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 27 (5) , 303-304
https://doi.org/10.1063/1.88455

Abstract

Current‐voltage characteristics similar to those of a semiconductor‐controlled rectifier have been observed in three‐terminal devices which have only a single p‐n junction. The structure investigated is a layered sequence of metal/conducting ’’insulator’’/p‐silicon/n⁺‐silicon with electrical terminals at the metal and both sides of the junction. If a positive bias is applied to the metal the device can reside in either a low‐ or a high‐impedance state. These states are brought about by controlling the presence or absence of the inversion layer at the insulator‐silicon interface. Experimental data demonstrate the efficiency of this control permitted by the third intermediate terminal.

Keywords

This publication has 2 references indexed in Scilit:

Bistable impedance states in MIS structures through controlled inversion
Applied Physics Letters, 1973
Thin-MIS-Structure Si Negative-Resistance Diode
Applied Physics Letters, 1972