Dose rate dependence of the ion-beam-induced epitaxial crystallization in silicon
- 1 June 1993
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 80-81, 538-542
- https://doi.org/10.1016/0168-583x(93)96176-d
Abstract
No abstract availableKeywords
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