Theoretical investigation of the equilibrium surface structure of Si1−x−yGexCy alloys
- 5 December 1998
- journal article
- Published by Elsevier in Surface Science
- Vol. 418 (2) , L62-L67
- https://doi.org/10.1016/s0039-6028(98)00758-4
Abstract
No abstract availableKeywords
This publication has 20 references indexed in Scilit:
- Photoluminescence of Tensile Strained, Exactly Strain Compensated, and Compressively Strained Layers on SiPhysical Review Letters, 1998
- Lattice parameter in Si1−yCy epilayers: Deviation from Vegard’s ruleApplied Physics Letters, 1998
- Simulations of Carbon Containing Semiconductor Alloys: Bonding, Strain Compensation, and Surface StructureInternational Journal of Modern Physics C, 1998
- Theory of strain and electronic structure of and alloysPhysical Review B, 1998
- Carbon dependence of Raman mode frequencies in alloysPhysical Review B, 1996
- Microstructural and elastic properties of silicon-germanium-carbon alloysApplied Surface Science, 1996
- Monte Carlo Studies of Ternary Semiconductor Alloys: Application to theSystemPhysical Review Letters, 1995
- Theoretical investigation of random Si-C alloysPhysical Review B, 1993
- Growth and strain compensation effects in the ternary Si1−x−yGexCy alloy systemApplied Physics Letters, 1992
- Optical band gap of the ternary semiconductor Si1−x−yGexCyJournal of Applied Physics, 1991