Thermal-CVD Produced Amorphous-Silicon Thin-Film Transistors-Ambipolar Characteristics
- 1 January 1990
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
Amorphous-silicon thin-film transistors (a-Si TFTs) have been fabricated by using an a-Si layer deposited by low-temperature thermal-CVD method using higher silanes. The TFT with thermally grown SiO2 gate was operated in both the n-channel mode and the p-channel mode. The maximum field-effect mobility and typical on/off current ratio were 1.5 cm2/Vs and 107 for the n-channel operation, and 0.2 cm2/Vs and 106 for the p-channel operation, respectively. Free electron mobility in the conduction band and free hole mobility in the valence band have been estimated, using the temperature dependence of the field-effect mobilities. It was found that the hole mobility is as high as the electron mobility.Keywords
This publication has 4 references indexed in Scilit:
- a-Si:H TFTs using low-temperature CVD of Si 3 H 8Electronics Letters, 1989
- Flat-panel displays displace large, heavy, power-hungry CRTsIEEE Spectrum, 1989
- a-Si MOS Fet with Native-Oxide Gate Grown by Normal-Pressure and Low-Temperature Thermal-Oxidation MethodMRS Proceedings, 1987
- High-performance amorphous-silicon field-effect transistorsJournal of Applied Physics, 1980