Imperfections in Solution-Grown β-Silicon Carbide Crystals

Imperfections in high‐purity β‐silicon carbide crystal platelets, (111) habit, were studied using Lang x‐ray topography, Weissenberg photographs, and etch pitting. Stacking faults on {111} planes with associated partial dislocations of the $\text{〈112〉}$ type and {111} twinning have been observed. In well‐formed platelets, twinning is usually confined to the habit plane. Stacking faults occur parallel with the platelet surface and on {111} planes inclined to the platelet surface, and they tend to cluster in overlapping, closely spaced groups. Etch pits on the surface are caused by emerging $\text{〈112〉}$ partial dislocations that bound the inclined stacking faults. Partial dislocations in the habit plane have also been identified from diffraction contrast and extinction effects.