DESIGN CONSIDERATIONS FOR MOLECULAR BEAM EPITAXY SYSTEMS
- 1 January 1980
- book chapter
- Published by Elsevier
Abstract
No abstract availableThis publication has 18 references indexed in Scilit:
- Acceptor dopants in silicon molecular-beam epitaxyJournal of Applied Physics, 1977
- Transmission electron microscopy of interfaces in III–V compound semiconductorsJournal of Vacuum Science and Technology, 1977
- A study of TiO system between Ti3O5 and TiO2 at high temperature by means of electrical resistivityJournal of Solid State Chemistry, 1977
- Operation of a cryopumped UHV systemJournal of Vacuum Science and Technology, 1977
- Epitaxial structures with alternate-atomic-layer composition modulationApplied Physics Letters, 1976
- A one-dimensional SiGe superlattice grown by UHV epitaxyApplied Physics A, 1975
- Molecular beam epitaxy of II-VI compoundsJournal of Applied Physics, 1975
- Molecular beam epitaxyProgress in Solid State Chemistry, 1975
- Structures Grown by Molecular Beam EpitaxyJournal of Vacuum Science and Technology, 1973
- Interaction of Ga and As2 Molecular Beams with GaAs SurfacesJournal of Applied Physics, 1968