MD simulation of ion beam induced crystallization and amorphization in silicon

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Abstract
The processes of IBIEC and IBIIA in Si are investigated by molecular dynamics simulations using the Stillinger-Weber potential. For this purpose two amorphous Si/crystalline Si systems of 5120 and 1440 Si atoms are prepared. The ion beam irradiation is simulated by recoils started near the a/c interface. The investigations are performed for different temperatures (10K, RT, 600K), different energies of the recoils (15 eV, 20 eV, 50 eV) and different densities of the recoils represented by different numbers (1, 10, 50) of simultaneously started recoils. For IBIEC and IBIIA the energy and the density of the recoils, respectively, proved to be the important quantities. The microscopic structure near the interface is analyzed and the processes responsible for the IBIEC and the IBIIA are discussed.