Low temperature buffer growth to improve hydride vapor phase epitaxy of GaN
- 13 May 1999
- journal article
- Published by Elsevier in Materials Science and Engineering: B
- Vol. 59 (1-3) , 12-15
- https://doi.org/10.1016/s0921-5107(98)00404-8
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxyApplied Physics Letters, 1997
- Thick GaN Epitaxial Growth with Low Dislocation Density by Hydride Vapor Phase EpitaxyJapanese Journal of Applied Physics, 1997
- Room Temperature Pulsed Operation of Nitride Based Multi-Quantum-Well Laser Diodes with Cleaved Facets on Conventional C-Face Sapphire SubstratesJapanese Journal of Applied Physics, 1996
- Growth and Characterization of Thick GaN by Sublimation Method and Homoepitaxial Growth by Metalorganic Chemical Vapor DepositionJapanese Journal of Applied Physics, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- GaN Crystals Grown in the Increased Volume High-Pressure ReactorsMRS Proceedings, 1996
- III–V Nitrides—thermodynamics and crystal growth at high N2 pressureJournal of Physics and Chemistry of Solids, 1995
- High-brightness InGaN/AlGaN double-heterostructure blue-green-light-emitting diodesJournal of Applied Physics, 1994
- Hydride vapor phase epitaxial growth of a high quality GaN film using a ZnO buffer layerApplied Physics Letters, 1992
- GaN Growth Using GaN Buffer LayerJapanese Journal of Applied Physics, 1991