MBE growth of two-dimensional electron system with extremely low disorder
- 2 February 1989
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 95 (1-4) , 250-252
- https://doi.org/10.1016/0022-0248(89)90394-1
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Threshold transport of high-mobility two-dimensional electron gas in GaAs/AlGaAs heterostructuresApplied Physics Letters, 1988
- Evidence for the Fractional Quantum Hall State atPhysical Review Letters, 1988
- Effect of arsenic source on the growth of high-purity GaAs by molecular beam epitaxyApplied Physics Letters, 1988
- Growth of low-density two-dimensional electron system with very high mobility by molecular beam epitaxyApplied Physics Letters, 1988
- Observation of an even-denominator quantum number in the fractional quantum Hall effectPhysical Review Letters, 1987
- GaAs structures with electron mobility of 5×106 cm2/V sApplied Physics Letters, 1987
- Delta- (°-) doping in MBE-grown GaAs: Concept and device applicationJournal of Crystal Growth, 1987
- The fractional quantum hall effectIEEE Journal of Quantum Electronics, 1986
- Mobility of the two-dimensional electron gas at selectively doped n -type As/GaAs heterojunctions with controlled electron concentrationsPhysical Review B, 1986
- Low temperature two-dimensional mobility of a GaAs heterolayerSurface Science, 1984