Kinetic Modeling and Measurement of Active Species Distributions During Dry Etching
- 1 January 1986
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
A simple kinetic dry etching model accounting for generation, loss, and transport of the reactive and by-product species is developed.To demonstrate and evaluate the model, the etching of silicon using SF6+O2+Ar in the plasma etch mode is investigated.Keywords
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