Interfacial properties of InP and phosphorus deposited at low temperature
- 1 August 1985
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 47 (3) , 272-274
- https://doi.org/10.1063/1.96188
Abstract
We are reporting on a large reduction in the density of states on the InP surface by a phosphorus overlayer. Phosphorus, which is deposited at low temperatures, is a high-resistivity amorphous semiconductor that provides chemical and physical continuity at the interface. The density of surface states, extracted from capacitance-voltage data on metal-insulator-capacitor diodes, is ∼1011/cm2 eV at 0.1 eV below the conduction-band minimum. The low density of states near the conduction band is interpreted as a reduction of phosphorus vacancies at the P-InP interface.Keywords
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