On the metastability of the EL2 defect in plastically deformed GaAs
- 30 September 1987
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 63 (10) , 885-888
- https://doi.org/10.1016/0038-1098(87)90332-2
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- The formation of arsenic antisite defects during plastic deformation of GaAsSolid State Communications, 1986
- Antisite defects in plastically-deformed GaAs: An alternative analysisSolid State Communications, 1986
- Analysis of the near-intrinsic and extrinsic photocapacitance due to the EL2 level in boron-implanted GaAsJournal of Applied Physics, 1986
- Antisite-related defects in plastically deformed GaAsPhysical Review B, 1986
- Deep Defect Levels in Plastically Deformed GaAsJapanese Journal of Applied Physics, 1986
- Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materialsJournal of Applied Physics, 1984
- Arsenic antisite defects as the main electron traps in plastically deformed GaAsApplied Physics A, 1983
- Identification of AsGa antisites in plastically deformed GaAsJournal of Applied Physics, 1982
- Effect of plastic deformation on the EPR spectrum of semi-insulating GaAs:CrPhysica Status Solidi (a), 1980
- A study of deformation-produced deep levels inn-GaAs using deep level transient capacitance spectroscopyApplied Physics A, 1980