ICTS of MOS Interface States Enhanced by Gold Diffusion

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Abstract
An enhancement of interface states of Si MOS diode by gold diffusion is observed by the isothermal capacitance transient spectroscopy (ICTS) measurement. The observed ICTS spectra are identified as the interface states with the help of numerical simulation. Although the gold diffusion is accompanied by thermal annealing, the effect of the thermal annealing on the interface states is eliminated with the use of an extra annealing at a low temperature in a nitrogen ambient. It is also ascertained that the interface states enhanced by the gold diffusion increase as the density of diffused gold increases.