Isothermal Capacitance Transient Spectroscopy in MIS Structures
- 1 November 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (11R)
- https://doi.org/10.1143/jjap.21.1628
Abstract
A general formula for the capacitance transient response in an MIS structure has been developed, including the continuous density distribution of interface states and discrete multi-impurity levels. A new method of spectroscopic measurement is proposed for determining the density distributions and capture cross-sections of interface states and bulk impurity levels under isothermal conditions. The method is then applied to an n-InAs/anodic oxide MIS diode.Keywords
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