Long-Range Diffusion of Transition Metals in Silicon During Rapid Thermal Annealing
- 1 January 1989
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Interstitial-Substitutional Diffusion in Group III-V and Group IV Semiconductors: The Role of DislocationsDefect and Diffusion Forum, 1991
- The Behavior of Transition Metals in Silicon during Annealing TransientsDefect and Diffusion Forum, 1991
- Defect Generation and Gettering during Rapid Thermal AnnealingJournal of the Electrochemical Society, 1988
- Dissolution of Transition Metal Precipitates in Silicon by Rapid Thermal ProcessingJournal of the Electrochemical Society, 1987
- Anomalous diffusion and gettering of transition metals in siliconApplied Physics Letters, 1986
- The Use of Rapid Thermal Annealing for Studying Transition Metals in SiliconJournal of the Electrochemical Society, 1986
- Mechanism and kinetics of the diffusion of gold in siliconApplied Physics A, 1980
- Precipitation‐Induced Currents and Generation‐Recombination Currents in Intentionally Contaminated Silicon P+N JunctionsJournal of the Electrochemical Society, 1977
- Diffusion of Gold into Silicon CrystalsJournal of the Electrochemical Society, 1965
- Mechanism of Diffusion of Copper in GermaniumPhysical Review B, 1956